Jan 2024 – Jun 2025 · 1 yr 5 mos · Santa Barbara, California, United States · On-site

• Teaching graduate level two course series on Semiconductor Device Physics

Sep 2022 – Jun 2024 · 1 yr 9 mos

• Develop next generation GaN technology platforms for efficient power conversion

Jun 2017 – Aug 2022 · 5 yrs 2 mos

• Project lead for R&D of next gen GaN technology platforms for power conversion
• PI (govt contracts) for R&D of GaN technology and its applications
• Work with epi, process, and device teams to design power chips from ground up
• Experience with DOE techniques, Data Analysis of large datasets (Python and JMP), Mask Design, Device Modelling (COMSOL), Process Development

Nov 2015 – Jun 2017 · 1 yr 7 mos

• Development of process modules for GaN power electronics
• Evaluate the impact of processes on electrical characteristics
• Electrical testing of devices
• Development of scripts (Python, JMP) for analysis of large data sets
• DOE and Data Analysis
• Device modelling
• Push GaN technology for cheaper, faster and more efficient power conversion

Jan 2014 – Jun 2014 · 5 mos

• Course : Semiconductor Device Physics 1&2
• Office Hours
• Designing and grading homeworks

Sep 2010 – Oct 2015 · 5 yrs 1 mo

• Advisor : Prof. Umesh Mishra
• Design of III-N Hot Electron Transistors for high current gain - Analyze and understand the unique device to explore fundamental limits of ballistic transport in III-Nitrides. Novel device design to increase current gain and DC performance.
• Process design of III-N HETs
• Part of multiple projects including the III-N High Electron Mobility Transistor (HEMT), III-N Power Electronic Devices, and the Bonded Aperture Vertical Electron Transistor (BAVET)

Aug 2009 – Apr 2010 · 8 mos · Greater Lucknow Area

• Advisor : Prof. Shafi Qureshi
• B.Tech. final year Project
• On-chip temperature monitoring in FPGAs using ring oscillators

May 2009 – Jul 2009 · 2 mos · Santa Barbara County, California, United States

• Advisor : Prof. Umesh Mishra
• Measurement and characterization of trap states in GaN based HEMTs using Deep Level Transient Spectroscopy.
• Measurement and characterization of anisotropic mobility in N-Polar GaN HEMTs.