May 2019 – Aug 2020 · 1 yr 3 mos · Mumbai, Maharashtra

• Effects of UV exposure on PhotoVoltaic (PV) modules under Prof. Narendra Shiradkar
• To understand the performance of solar modules at high altitude, we surveyed 88 solar panels at three plant sites of different module technologies on 11,480 feet altitude in Leh which is having high UV as compared to the rest of India. And then performed major tests like current-voltage (I-V)characterization, Infrared (IR) thermography and visual inspections.
• To analyze the data I wrote a code for translation equation (IEC 60891) in MATLAB to translate data from ambient to Standard Temperature Condition. The average calculated performance degradation per year of the modules at each site are 0.62%, 0.71 and 0.59% and the main factor is sc (Short Circuit Current) degradation due to high UV spectrum.

May 2018 – Jul 2018 · 2 mos · Bengaluru, Karnataka

• DESE Dept. of IISc Banglore required an intern to simulate 2 Dimension Electron Gas (2DEG) effect in AlGaN/GaN High Electron Mobility Transport (HEMT) device in COMSOL Multiphysics.
• During this, I extensively studied research papers related to the piezoelectric effect in the GaN-based HEMT device. To get hands on the COMSOL tool, first I Simulated I-V characteristics of MOSFET and then design and simulate equilibrium state of AlGaN/GaN based HEMT in COMSOL multiphysics. I also replicated equivalent circuit of AlGaN/GaN HEMT device from research paper using MATLAB Simulink.
• At the end Prof. Mayank Shrivatsav awarded a certificate for sincerity and dedication towards the work done

May 2017 – Jul 2017 · 2 mos · Maharashtra, India

• Generating Random Number by exploiting variability in memory devices:
• One-Time Programmable(OTP) memory breakdown voltage variability - The electrical breakdown of thin oxides is stochastic. By biasing 'n' OTP devices at median voltage we could generate n bit random number. But the number being generated can be biased if bias is not at the median due to the supply voltage tolerance etc. So to circumvent this we connect two devices as a pair in parallel and applying a voltage to the pair, it will break down any one of the two with equal probability. We have tested the devices in the lab to demonstrate this.
• We published a journal paper in IEEE - Electron Devices Letters on this results titled "A Highly Reliable and Unbiased PUF Based on Differential OTP Memory"
• Link: "https://ieeexplore.ieee.org/document/8374082"