Jul 2025 – Jan 2026 · 6 mos · Bengaluru, Karnataka, India · Hybrid

• Develop and deliver customer user guides and manual documentation and release notes in an agile environment, prioritizing doc bug fixes.

Jul 2022 – Jun 2025 · 2 yrs 11 mos · Bengaluru, Karnataka, India · Hybrid

• Experienced writer on Junos OS and Junos OS EVO release notes new features documentation for mainline, maintenance releases.
• Developed content as sole writer on new feature concept topic and customer documentation by collaborating with SMEs and PLMs.
• Restructuring Identity Aware Firewall guide with new concept overview topics and task config.
• Building up new feature Configuration Example documentation along with topology as per customer requirement.
• Solving complex customer visible behavioural change (CVBC), and document PRs for documentation releases.
• Handling, updating, and maintaining multiple guides such as Juniper Network Management & Monitoring Guide, Juniper Identity Aware Firewall User Guide.
• Testing new features and cross-checking latest CLI updates in Junos virtual devices, ensuring a seamless user experience.
• Proficient with DITA and Oxygen XML authoring, publishing tools, and content management system.

Jul 2021 – Jun 2022 · 11 mos · Bengaluru, Karnataka, India · Hybrid

• Supported the NetAct 5G project by contributing to network management documentation.
• Coordinated with team by gathering information and understanding project requirements while editing & updating documents in accord to style and specifications based on customer needs.
• Worked on backend support for testing, troubleshooting the builds and ensuring on-time delivery to customers. Also, providing inputs and handling incoming prontos.
• Underwent several tools & technologies and modified coding to eradicate errors and improvise quality thus enhancing better support to the team.

Dec 2019 – Mar 2020 · 3 mos · New Delhi, Delhi, India

• The internship trainee included work on small signal parameter extraction of Gallium Nitride High Electron Mobility Transistor wherein the method to determine and model the small-signal equivalent circuit of GaN HEMT Device is processed.
• Intrinsic and Extrinsic parameters of the proposed model are extracted from Sparameters data. The circuit elements proposed in design of model has multiple set of values which is tuned using Advanced Design System (ADS) and thus the results are expected to have least error percentage values with minimum deviation compared to previous known values.
• The proposed circuit model can be prescribed for design of high frequency and high-power amplifier applications.