Vibhor Jain

Director of Engineering

Clifton Park, New York, United States14 yrs 8 mos experience

Most Likely To SwitchHighly Stable

Key Highlights

Expert in SiGe BiCMOS technology development.
Proven track record in RF applications for 5G.
Leadership in semiconductor device engineering.

Stackforce AI infers this person is a semiconductor technology expert with a focus on RF and BiCMOS applications.

Contact

Skills

Core Skills

Sige Hbt Device EngineeringHigh Performance Sige Bicmos TechnologiesDesign

Other Skills

developmentcharacterizationmm-wave5GRF applicationsWiFicellular Front end Modulepower amplifiersLNAshigh breakdown SiGe BiCMOS technologiesmm-wave applicationsFront end ModulesSemiconductor DeviceSemiconductor FabricationSemiconductor Process

Experience

14 yrs 8 mos

Total Experience

7 yrs 4 mos

Average Tenure

10 yrs 10 mos

Current Experience

Globalfoundries

4 roles

Director, SiGe BiCMOS development

Promoted

Mar 2025 – Present · 1 yr 2 mos

Sr Mgr/Dep Director Device Engineering

Promoted

Jul 2021 – Mar 2025 · 3 yrs 8 mos

RF Device Engineer

Apr 2020 – Jul 2021 · 1 yr 3 mos

SiGe HBT device engineer working on design, development and characterization of High performance SiGe BiCMOS technologies for mm-wave, 5G and RF applications

SiGe HBT device engineeringdesigndevelopmentcharacterizationHigh performance SiGe BiCMOS technologiesmm-wave+2

SiGe HBT Device Engineer

Jul 2015 – Apr 2020 · 4 yrs 9 mos

SiGe HBT device engineer working on design, development and characterization of
1. High performance SiGe BiCMOS technologies for mm-wave, 5G and RF applications
2. SiGe BiCMOS technologies for WiFi/cellular Front end Module (power amplifiers, LNAs) applications

SiGe HBT device engineeringdesigndevelopmentcharacterizationHigh performance SiGe BiCMOS technologiesmm-wave+6