Victor Moroz

CEO

Mountain View, California, United States40 yrs 5 mos experience
Most Likely To SwitchHighly Stable

Key Highlights

  • Over 100 granted US patents in semiconductor technology.
  • Expert in modeling advanced CMOS technologies.
  • Serves as Editor of IEEE Electron Device Letters.
Stackforce AI infers this person is a Semiconductor Technology Expert with extensive experience in EDA and CMOS modeling.

Contact

Skills

Core Skills

SemiconductorsCmos

Other Skills

EDASiliconICMicroelectronicsSimulationsTCLMixed SignalVLSIAlgorithmsHigh Performance ComputingAnalogCircuit DesignAnalog Circuit DesignSPICECadence Virtuoso

About

Victor Moroz grew up as a hunter-gatherer in Siberia and received M.S. degree in Electrical Engineering from Novosibirsk Technical University and Ph.D. degree in Applied Physics from the University of Nizhny Novgorod. After engaging in technology development at several semiconductor manufacturing companies and teaching semiconductor physics at a University, Dr. Moroz joined a Stanford spin-off Technology Modeling Associates in 1995. After IPO in 1997, the TMA TCAD team became part of Avanti in 1998, and in 2002 it became a key part of Synopsys, connecting a synthesis company to the manufacturing. Currently Dr. Moroz is a Synopsys Fellow, engaged in a variety of projects on modeling advanced CMOS with over 100 granted US patents, and serving as an Editor of IEEE Electron Device Letters.

Experience

40 yrs 5 mos
Total Experience
10 yrs 1 mo
Average Tenure
21 yrs 5 mos
Current Experience

Synopsys inc

3 roles

Synopsys Fellow

Promoted

Nov 2016Present · 9 yrs 7 mos

SemiconductorsEDACMOSSiliconICMicroelectronics+13

Scientist

Jan 2011Nov 2016 · 5 yrs 10 mos

Principal Engineer

Jan 2005Jan 2011 · 6 yrs

Tma -> avanti -> synopsys

Engineer and engineering manager

Jan 1995Jan 2005 · 10 yrs

University of nizhny novgorod

Professor

Jan 1992Jan 1994 · 2 yrs

Semiconductor industry

Engineer

Jan 1984Jan 1991 · 7 yrs

Education

State University of Nizhni Novgorod named after N.I. Lobachevsky (UNN)

Ph. D. — semiconductor physics

Jan 1989Jan 1992

Novosibirsk State Technical University (NSTU)

MSEE — semiconductor devices and circuits

Jan 1979Jan 1984

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